? silikron semiconductor c orporation 200 9 . 6 .1 0 version: 2 . 1 page 1 of 5 ssf 1090 absolute maximum ratings parameter max. units i d @t c = 25 ? c continuous d rain c urrent,vgs@10v 15 a i d @t c = 1 0 0 ? c continuous d rain c urrent,vgs@10v 10 i dm pulsed d rain c urrent 60 p d @t c = 2 5 ? c power d issipation 4 2 w linear d erating f actor 0. 4 w / ? c v gs gate - to - source v oltage 20 v e as single p ulse a valanche e nergy 240 mj e ar repetitive avalanche energy tbd mj dv/dt p eak diode recovery voltage 28 v/ns t j t stg operating junction and storage temperatur e range C 5 5 to +1 75 ? c thermal resistance parameter min. typ. max. units r jc junction - to - case 3.6 c/w r ja junction - to - a mbient 69 *when mounted on the minimum pas size recommended ? c ( unles s otherwise specified) parameter min. typ. max. units test conditions bv dss drain - to - source b reakdown v oltage 10 0 v v gs =0v,i d =250a r ds(on) static drain - to - source o n - resistance 0.06 0.09 v gs =10v,i d = 2 a v gs(th) gate t hreshold v oltage 2.0 4.0 v v ds =v gs ,i d =250a i dss drain - to - source l eakage current 1 a v ds = 3 0 v ,v gs =0v 1 0 v ds = 10 0 v , v gs =0v,t j =1 5 0 ? c i gss gate - to - source f orward leakage 100 na v gs =20v ssf 1090 top view ( to - 220 ) id = 15 a bv= 100 v rdson=0. 06 ( typ.) feathers: ? advanced trench process technology ? special designed for convertors and power controls ? high density cell des ign for ultra low rdson ? fully characterized avalanche voltage and current ? avalanche energy 100% test description: the ssf 1090 is a new generation of high voltage and low current n C channel enhancement mode trench power mosfet. this new technology increase s the device reliability and electrical parameter repeatability . ssf 1090 is assembled in high reliability and qualified assembly house. application: ? p ower switching application
? silikron semiconductor c orporation 200 9 . 6 .1 0 version: 2 . 1 page 2 of 5 ssf 1090 gate - to - source r everse leakage - 100 v gs = - 20v q g total g ate c harge 21.18 n c i d = 9.2 a , v gs =10v v dd = 80 v ,rl= 8.6 q gs gate - to - source charge 4 .7 q gd gate - to - drain("miller") charge 8.5 t d(on) turn - on d elay t ime 1 0 ns v dd = 5 0v i d = 9.2 a ,r l = 5.4 r g = 18 v gs =10v t r rise t ime 9.5 t d(off) turn - off d elay t ime 18.3 t f fall t ime 4.2 c iss input c apacitance 697 75 0 pf v gs =0v v ds =25v f=1.0mhz c oss output c apacitance 59 110 c rss reverse t ra nsfer c apacitance 43 45 source - drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current (body diode) 3 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source cu rrent (body diode) 18 v sd diode forward voltage 1. 3 v t j = 2 5 ? c,i s = 3 a,v gs =0v t rr reverse recovery time 35 ns t j = 2 5 ? c,i f = 9.2 a di/dt=100a/s q rr reverse recovery charge 67 . 2 c t on forward turn - on time i ntrinsic turn - on time is negligible (turn - on is dominated by ls + ld) eas t est c ircuit: gate c harge t est c ir cuit: notes: repe titive rating; pu lse width limited by m ax junction temperature t est condition: l = 3 0 mh , vd d = 50 v , id= 4 a pulse width300s , duty cycle1.5% ; rg = 25 ?? starting tj = 25c v d d b v d s s l r g v d d r l r g 1 m a v g s
? silikron semiconductor c orporation 200 9 . 6 .1 0 version: 2 . 1 page 3 of 5 ssf 1090 switch time t est c ircuit: switch waveform : on resistance vs. junction temperature breakdown voltage vs. junction temperature gate charge source - drain diode forward voltage
? silikron semiconductor c orporation 200 9 . 6 .1 0 version: 2 . 1 page 4 of 5 ssf 1090 safe operation area max drain c urrent vs. junction temperature transient thermal impedance curve
? silikron semiconductor c orporation 200 9 . 6 .1 0 version: 2 . 1 page 5 of 5 ssf 1090 to220 mechanical data:
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